منابع مشابه
Proximity effect in planar Superconductor/Semiconductor junction
We have measured the very low temperature (down to 30mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer I stands for the Schottky barrier). As the temperature is lowered below the gap, the resistance increases as expected in SIN junction. Around 300mK, the resistance shows a maximum and decreases at lower...
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Effect of molecular binding to a semiconductor on metal/molecule/semiconductor junction behavior.
Diodes made by (indirectly) evaporating Au on a monolayer of molecules that are adsorbed chemically onto GaAs, via either disulfide or dicarboxylate groups, show roughly linear but opposite dependence of their effective barrier height on the dipole moment of the molecules. We explain this by Au-molecule (electrical) interactions not only with the exposed end groups of the molecule but also with...
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A three-terminal thermoelectric device based on a p–i–n semiconductor junction is proposed, where the intrinsic region is mounted onto what is typically a bosonic thermal terminal. Remarkably, the figure of merit of the device is governed also by the energy distribution of the bosons participating in the transport processes, in addition to the electronic. An enhanced figure of merit can be obta...
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ژورنال
عنوان ژورنال: Journal of Electronics and Control
سال: 1957
ISSN: 0368-1947
DOI: 10.1080/00207215708937064